SPN8878B mosfet equivalent, n-channel mosfet.
* 30V/20A,RDS(ON)=14mΩ@VGS=10V
* 30V/15A,RDS(ON)=19mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and.
* Power Management in Note book
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* 30V/20A.
The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC/DC converters using.
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